JAN2N3421P
ActivePOWER BJT TO-5 ROHS COMPLIANT: YES
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JAN2N3421P
ActivePOWER BJT TO-5 ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | JAN2N3421P |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 3 A |
| Current - Collector Cutoff (Max) [Max] | 5 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 40 |
| Grade | Military |
| Mounting Type | Through Hole |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Power - Max [Max] | 1 W |
| Qualification | MIL-PRF-19500/393 |
| Supplier Device Package | TO-5AA |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 23.47 | |
| Microchip Direct | N/A | 1 | $ 25.27 | |
| Newark | Each | 100 | $ 23.47 | |
| 500 | $ 22.56 | |||
Description
General part information
JAN2N3421P-Transistor-PIND Series
This specification covers the performance requirements for NPN, silicon, 2N3418, 2N3419, 2N3420 and 2N3421 transistors for use in medium power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500/393 and two levels of product assurance (JANHC and JANKC) for die (element evaluation) are provided, as specified in MIL-PRF-19500/393. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.
Documents
Technical documentation and resources