Discrete Semiconductor Products

NTMD4820NR2G

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TRANS MOSFET N-CH 30V 6.4A 8-PIN SOIC N T/R

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Discrete Semiconductor Products

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TRANS MOSFET N-CH 30V 6.4A 8-PIN SOIC N T/R

Technical Specifications

Parameters and characteristics for this part

Specification	NTMD4820NR2G

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	4.9 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	7.7 nC
Input Capacitance (Ciss) (Max) @ Vds	940 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	750 mW
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Dual N-Channel Power MOSFET 30V, 8.0A, 20mΩ

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power - Max [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology	Configuration	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id
ON Semiconductor NTMD4820NR2G	Surface Mount	940 pF	Logic Level Gate	750 mW	8-SOIC	30 V	20 mOhm	7.7 nC	MOSFET (Metal Oxide)	2 N-Channel (Dual)	8-SOIC	3.9 mm	0.154 in	-55 °C	150 °C	4.9 A	3 V

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General part information

Power MOSFET 30 V, 8 A, Dual N-Channel, SOIC-8

Technical documentation and resources