NTMD4820N Series

Dual N-Channel Power MOSFET 30V, 8.0A, 20mΩ

Catalog

Dual N-Channel Power MOSFET 30V, 8.0A, 20mΩ

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power - Max [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology	Configuration	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id
ON Semiconductor NTMD4820NR2G	Surface Mount	940 pF	Logic Level Gate	750 mW	8-SOIC	30 V	20 mOhm	7.7 nC	MOSFET (Metal Oxide)	2 N-Channel (Dual)	8-SOIC	3.9 mm	0.154 in	-55 °C	150 °C	4.9 A	3 V

Dual N-Channel Power MOSFET 30V, 8.0A, 20mΩ

• Low RDS(on)to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• Dual SOIC-8 Surface Mount Package Saves Board Space

Power MOSFET 30 V, 8 A, Dual N-Channel, SOIC-8