Discrete Semiconductor Products
RQ7L055BGTCR
ActiveRohm Semiconductor
MOSFET, N-CH, 60V, 5.5A, TSMT8 ROHS COMPLIANT: YES
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Discrete Semiconductor Products
RQ7L055BGTCR
ActiveRohm Semiconductor
MOSFET, N-CH, 60V, 5.5A, TSMT8 ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RQ7L055BGTCR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.5 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 7.6 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 460 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Power Dissipation (Max) | 1.1 W |
| Rds On (Max) @ Id, Vgs [Max] | 29 mOhm |
| Supplier Device Package | TSMT8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RQ7L055BG Series
RQ7L055BG is a power MOSFET with low on - resistance, suitable for general switching applications.
Documents
Technical documentation and resources