Specification	TP65H480G4JSG-TR

Current - Continuous Drain (Id) @ 25°C	3.6 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	9 nC
Input Capacitance (Ciss) (Max) @ Vds	760 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-PowerTDFN
Power Dissipation (Max)	13.2 W
Rds On (Max) @ Id, Vgs	560 mOhm
Technology	GaNFET (Cascode Gallium Nitride FET)
Vgs (Max)	18 V
Vgs(th) (Max) @ Id	2.8 V

TP65H480 Series

Part	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Technology	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)
Renesas Electronics Corporation TP65H480G4JSG-TR	560 mOhm	13.2 W	760 pF	Surface Mount	9 nC	3-PowerTDFN	GaNFET (Cascode Gallium Nitride FET)	3.6 A	8 V	2.8 V	150 °C	-55 °C	18 V	N-Channel	650 V
Renesas Electronics Corporation TP65H480G4JSG-TR	560 mOhm	13.2 W	760 pF	Surface Mount	9 nC	3-PowerTDFN	GaNFET (Cascode Gallium Nitride FET)	3.6 A	8 V	2.8 V	150 °C	-55 °C	18 V	N-Channel	650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 3.6A (Tc) 13.2W (Tc) Surface Mount 3-PQFN (5x6)

Technical documentation and resources