TP65H480 Series

Catalog

GALLIUM NITRIDE (GAN) TRANSISTOR, 650 V, 3.6 A, 0.56 OHM, 9 NC, QFN, SURFACE MOUNT

Part	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Technology	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)
Renesas Electronics Corporation TP65H480G4JSG-TR	560 mOhm	13.2 W	760 pF	Surface Mount	9 nC	3-PowerTDFN	GaNFET (Cascode Gallium Nitride FET)	3.6 A	8 V	2.8 V	150 °C	-55 °C	18 V	N-Channel	650 V
Renesas Electronics Corporation TP65H480G4JSG-TR	560 mOhm	13.2 W	760 pF	Surface Mount	9 nC	3-PowerTDFN	GaNFET (Cascode Gallium Nitride FET)	3.6 A	8 V	2.8 V	150 °C	-55 °C	18 V	N-Channel	650 V