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TO-252AA
Discrete Semiconductor Products

FDD2670

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 200V 3.6A, 130MΩ

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TO-252AA
Discrete Semiconductor Products

FDD2670

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 200V 3.6A, 130MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationFDD2670
Current - Continuous Drain (Id) @ 25°C3.6 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs43 nC
Input Capacitance (Ciss) (Max) @ Vds1228 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)70 W, 3.2 W
Rds On (Max) @ Id, Vgs130 mOhm
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.51
10$ 1.62
100$ 1.11
500$ 0.89
1000$ 0.82
Digi-Reel® 1$ 2.51
10$ 1.62
100$ 1.11
500$ 0.89
1000$ 0.82
Tape & Reel (TR) 2500$ 0.74
5000$ 0.74
NewarkEach (Supplied on Full Reel) 2500$ 0.80
ON SemiconductorN/A 1$ 0.79

Description

General part information

FDD2670 Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON)specifications.The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.