FDD2670 Series

N-Channel PowerTrench® MOSFET 200V 3.6A, 130mΩ

Catalog

N-Channel PowerTrench® MOSFET 200V 3.6A, 130mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDD2670	3.6 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252AA	3.2 W 70 W	N-Channel	4.5 V	1228 pF	20 V	Surface Mount	43 nC	MOSFET (Metal Oxide)	130 mOhm	200 V	10 V	-55 °C	150 °C

Catalog

N-Channel PowerTrench® MOSFET 200V 3.6A, 130mΩ

Key Features

• 3.6 A, 200 V

• RDS(ON)= 130 mΩ @ VGS= 10V

• Low gate charge

• Fast switching speed

• High performance trench technology for extremelylow RDS(ON)

• High power and current handling capability

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON)specifications.The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.