Specification	FQD3P50TM

Current - Continuous Drain (Id) @ 25°C	2.1 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	50 W, 2.5 W
Rds On (Max) @ Id, Vgs	4.9 Ohm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FQD3P50TM Series

Power MOSFET, P-Channel, QFET®, -500 V, -2.1 A, 4.9 Ω, DPAK

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Qualification	Grade
ON Semiconductor FQD3P50TM	-55 °C	150 °C	30 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	5 V	10 V	23 nC	4.9 Ohm	TO-252AA	2.5 W 50 W	2.1 A	P-Channel	500 V	Surface Mount	MOSFET (Metal Oxide)
ON Semiconductor FQD3P50TM-F085	-55 °C	150 °C	30 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	5 V	10 V	23 nC	4.9 Ohm	TO-252AA	2.5 W 50 W	2.1 A	P-Channel	500 V	Surface Mount	MOSFET (Metal Oxide)	AEC-Q101	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.40
		10	$ 1.15
		100	$ 0.89
		500	$ 0.76
		1000	$ 0.62
	Digi-Reel®	1	$ 1.40
		10	$ 1.15
		100	$ 0.89
		500	$ 0.76
		1000	$ 0.62
	Tape & Reel (TR)	2500	$ 0.58
		5000	$ 0.55
		12500	$ 0.53
Newark	Each (Supplied on Cut Tape)	1	$ 1.56
		10	$ 1.19
		25	$ 1.10
		50	$ 1.01
		100	$ 0.93
		250	$ 0.86
		500	$ 0.79
		1000	$ 0.64
ON Semiconductor	N/A	1	$ 0.56

Description

General part information

FQD3P50TM Series

This P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.