FQD3P50TM Series

Power MOSFET, P-Channel, QFET®, -500 V, -2.1 A, 4.9 Ω, DPAK

Catalog

Power MOSFET, P-Channel, QFET®, -500 V, -2.1 A, 4.9 Ω, DPAK

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Qualification	Grade
ON Semiconductor FQD3P50TM	-55 °C	150 °C	30 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	5 V	10 V	23 nC	4.9 Ohm	TO-252AA	2.5 W 50 W	2.1 A	P-Channel	500 V	Surface Mount	MOSFET (Metal Oxide)
ON Semiconductor FQD3P50TM-F085	-55 °C	150 °C	30 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	5 V	10 V	23 nC	4.9 Ohm	TO-252AA	2.5 W 50 W	2.1 A	P-Channel	500 V	Surface Mount	MOSFET (Metal Oxide)	AEC-Q101	Automotive

Catalog

Power MOSFET, P-Channel, QFET®, -500 V, -2.1 A, 4.9 Ω, DPAK

Key Features

• Low RDS(on)

• Low gate charge ( Typ. 18nC)

• Low Crss( Typ. 9.5pF)

• 100% avalanche tested

Description

This P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.