Discrete Semiconductor Products

SQJ136ELP-T1_GE3

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MOSFET N-CH 40V 350A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 40V 350A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ136ELP-T1_GE3

Current - Continuous Drain (Id) @ 25°C	350 A
Drain to Source Voltage (Vdss)	40 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	150 nC
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	500 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	1.12 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Package / Case	FET Type	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Qualification	Grade	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Vgs(th) (Max) @ Id [Max]	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SQJ136ELP-T1_GE3	PowerPAK® SO-8	N-Channel	500 W	MOSFET (Metal Oxide)	150 nC	1.12 mOhm	AEC-Q101	Automotive	Surface Mount	350 A	PowerPAK® SO-8	-55 °C	175 ░C	20 V	2.2 V	40 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 350A (Tc) 500W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources