Discrete Semiconductor Products
STF16N60M2
ActiveSTMicroelectronics
N-CHANNEL 600 V, 0.28 OHM TYP., 12 A MDMESH M2 POWER MOSFET IN TO-220FP PACKAGE
Discrete Semiconductor Products
STF16N60M2
ActiveSTMicroelectronics
N-CHANNEL 600 V, 0.28 OHM TYP., 12 A MDMESH M2 POWER MOSFET IN TO-220FP PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STF16N60M2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 700 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 25 W |
| Rds On (Max) @ Id, Vgs | 320 mOhm |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 1.63 | |
Description
General part information
STF16N60M2 Series
This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Documents
Technical documentation and resources