Specification	FDN8601

Current - Continuous Drain (Id) @ 25°C	2.7 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	5 nC
Input Capacitance (Ciss) (Max) @ Vds	210 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs [Max]	109 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDN8601 Series

N-Channel PowerTrench® MOSFET 100V, 2.7A, 109mΩ

Part	FET Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max)
ON Semiconductor FDN8601	N-Channel	SC-59 SOT-23-3 TO-236-3	-55 °C	150 °C	5 nC	210 pF	20 V	6 V 10 V	SOT-23-3	MOSFET (Metal Oxide)	109 mOhm	2.7 A	Surface Mount	4 V	100 V	1.5 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This N-Channel MOSFET is produced using an advanced Power Trench®process that has been optimized for rDS(on), switching performance and ruggedness.

Technical documentation and resources