SN74CB3Q3305PW
LTB3.3-V, 1:1 (SPST), 2-CHANNEL FET BUS SWITCH (ACTIVE HIGH)
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SN74CB3Q3305PW
LTB3.3-V, 1:1 (SPST), 2-CHANNEL FET BUS SWITCH (ACTIVE HIGH)
Technical Specifications
Parameters and characteristics for this part
| Specification | SN74CB3Q3305PW |
|---|---|
| Circuit | 1 x 1:1 |
| Independent Circuits | 2 |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-TSSOP |
| Package / Case [custom] | 0.173 " |
| Package / Case [custom] | 4.4 mm |
| Supplier Device Package | 8-TSSOP |
| Type | Bus Switch |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 2.3 V |
| Voltage Supply Source | Single Supply |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 0.91 | |
| 10 | $ 0.82 | |||
| 25 | $ 0.78 | |||
| 150 | $ 0.64 | |||
| 300 | $ 0.60 | |||
| 600 | $ 0.53 | |||
| 1050 | $ 0.49 | |||
| Texas Instruments | TUBE | 1 | $ 1.12 | |
| 100 | $ 0.76 | |||
| 250 | $ 0.59 | |||
| 1000 | $ 0.39 | |||
Description
General part information
SN74CB3Q3305 Series
The SN74CB3Q3305 device is a high-bandwidth FET bus switch using a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports switching input voltage beyond the supply on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3305 device provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.
This device is fully specified for partial-power-down applications using Ioff. The Ioffcircuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.
Documents
Technical documentation and resources
