Discrete Semiconductor Products

SDUR60Q60WT

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DIODE GEN PURP 600V 30A TO247AD

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Discrete Semiconductor Products

Active

DIODE GEN PURP 600V 30A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	SDUR60Q60WT

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	40 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Reverse Recovery Time (trr)	Technology	Package / Case	Supplier Device Package	Speed	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Current - Average Rectified (Io) (per Diode)	Diode Configuration
SMC Diode Solutions SDUR60Q60WT	40 ns	Standard	TO-247-3	TO-247AD	200 mA 500 ns	1.8 V	Through Hole	10 µA	600 V	150 °C	-55 °C	30 A
SMC Diode Solutions SDUR60P60WT	50 ns	Standard	TO-247-3	TO-247AD	200 mA 500 ns	1.7 V	Through Hole	150 µA	600 V	175 ░C	-55 C		30 A	1 Pair Common Cathode

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 30A Through Hole TO-247AD

Technical documentation and resources