Discrete Semiconductor Products

SDUR60Q60W

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DIODE GEN PURP 600V 60A TO247AC

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Discrete Semiconductor Products

Active

DIODE GEN PURP 600V 60A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	SDUR60Q60W

Current - Average Rectified (Io)	60 A
Current - Reverse Leakage @ Vr	25 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	40 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-247AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.4 V

Part	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Package / Case	Current - Reverse Leakage @ Vr	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io) (per Diode)	Diode Configuration
SMC Diode Solutions SDUR60Q60W	200 mA 500 ns	175 ░C	-55 °C	Standard	60 A	40 ns	2.4 V	TO-247AC	TO-247-2	25 µA	Through Hole	600 V
SMC Diode Solutions SDUR60Q60WT	200 mA 500 ns	150 °C	-55 °C	Standard	30 A	40 ns		TO-247AD	TO-247-3	10 µA	Through Hole	600 V	1.8 V
SMC Diode Solutions SDUR60P60WT	200 mA 500 ns	175 ░C	-55 °C	Standard		50 ns	1.7 V	TO-247AD	TO-247-3	150 µA	Through Hole	600 V		30 A	1 Pair Common Cathode

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 60A Through Hole TO-247AC

Technical documentation and resources