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Technical Specifications
Parameters and characteristics for this part
| Specification | HMC5832LP6CE |
|---|---|
| Current - Supply | 350 mA |
| Frequency [Max] | 12.8 GHz |
| Frequency [Min] | 11.5 GHz |
| P1dB | 13 dBm |
| RF Type | General Purpose |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
HMC583 Series
The HMC583LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC583LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +11 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5×5 mm surface mount package, and requires no external matching components.APPLICATIONSPoint to Point/Multipoint RadioTest Equipment & Industrial ControlsSATCOMMilitary End-Use
Documents
Technical documentation and resources
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