Discrete Semiconductor Products

RJK03B9DPA-00#J53

Obsolete

MOSFET N-CH 30V 30A 8WPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 30A 8WPAK

Technical Specifications

Parameters and characteristics for this part

Specification	RJK03B9DPA-00#J53

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1110 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	10.6 mOhm
Supplier Device Package	8-WPAK
Technology	MOSFET (Metal Oxide)

N Channel Power MOSFET

Part	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	FET Type	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Operating Temperature
Renesas Electronics Corporation RJK03B9DPA-00#J5A	25 W	7.4 nC	30 V	30 A	N-Channel	MOSFET (Metal Oxide)	10.6 mOhm	8-WPAK	8-PowerWDFN	1110 pF	Surface Mount	150 °C
Renesas Electronics Corporation RJK03B9DPA-00#J53	25 W	7.4 nC	30 V	30 A	N-Channel	MOSFET (Metal Oxide)	10.6 mOhm	8-WPAK	8-PowerWDFN	1110 pF	Surface Mount	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	541	$ 0.55

General part information

The RJK03B9DPA is a N Channel Power MOSFET.

Technical documentation and resources