Catalog
N Channel Power MOSFET
Description
AI
The RJK03B9DPA is a N Channel Power MOSFET.
N Channel Power MOSFET
N Channel Power MOSFET
| Part | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | FET Type | Technology | Rds On (Max) @ Id, Vgs | Supplier Device Package | Package / Case | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics Corporation | 25 W | 7.4 nC | 30 V | 30 A | N-Channel | MOSFET (Metal Oxide) | 10.6 mOhm | 8-WPAK | 8-PowerWDFN | 1110 pF | Surface Mount | 150 °C |
Renesas Electronics Corporation | 25 W | 7.4 nC | 30 V | 30 A | N-Channel | MOSFET (Metal Oxide) | 10.6 mOhm | 8-WPAK | 8-PowerWDFN | 1110 pF | Surface Mount | 150 °C |