VS-GBPC2510W

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BRIDGE RECT 1P 1KV 25A GBPC-W

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Discrete Semiconductor Products

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BRIDGE RECT 1P 1KV 25A GBPC-W

Technical Specifications

Parameters and characteristics for this part

Specification	VS-GBPC2510W

Current - Average Rectified (Io)	25 A
Current - Reverse Leakage @ Vr	2 mA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	GBPC-W, 4-Square
Supplier Device Package	GBPC-W
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V
Voltage - Peak Reverse (Max) [Max]	1000 V

Part	Voltage - Peak Reverse (Max) [Max]	Technology	Mounting Type	Current - Reverse Leakage @ Vr	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Current - Average Rectified (Io)	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Diode Type
Vishay General Semiconductor - Diodes Division GBPC2510W-E4/51	1000 V	Standard	Through Hole	5 µA	4-Square GBPC-W	-55 °C	150 °C	25 A	GBPC-W	1.1 V	Single Phase
Vishay General Semiconductor - Diodes Division VS-GBPC2510W	1000 V	Standard	Through Hole	2 mA	4-Square GBPC-W	-55 °C	150 °C	25 A	GBPC-W	1.1 V	Single Phase
Vishay General Semiconductor - Diodes Division GBPC2510W(UM)E4/51	1000 V	Standard	Through Hole	5 µA	4-Square GBPC-W	-55 °C	150 °C	25 A	GBPC-W	1.1 V	Single Phase

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 1 kV Through Hole GBPC-W

Technical documentation and resources