Specification	FQB10N50CFTM-WS

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Input Capacitance (Ciss) (Max) @ Vds	2210 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	143 W
Rds On (Max) @ Id, Vgs	610 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

FQB10N50CFTM Series

Power MOSFET, N-Channel, QFET®, FRFET®, 500 V, 10 A, 610 mΩ, D2PAK

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type
ON Semiconductor FQB10N50CFTM-WS	60 nC	500 V	MOSFET (Metal Oxide)	TO-263 (D2PAK)	610 mOhm	4 V	2210 pF	30 V	-55 °C	150 °C	10 V	143 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	10 A	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQB10N50CFTM Series

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.