FQB10N50CFTM Series

Power MOSFET, N-Channel, QFET®, FRFET®, 500 V, 10 A, 610 mΩ, D2PAK

Catalog

Power MOSFET, N-Channel, QFET®, FRFET®, 500 V, 10 A, 610 mΩ, D2PAK

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type
ON Semiconductor FQB10N50CFTM-WS	60 nC	500 V	MOSFET (Metal Oxide)	TO-263 (D2PAK)	610 mOhm	4 V	2210 pF	30 V	-55 °C	150 °C	10 V	143 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	10 A	N-Channel

Catalog

Power MOSFET, N-Channel, QFET®, FRFET®, 500 V, 10 A, 610 mΩ, D2PAK

Key Features

• 10 A, 500 V, RDS(on)= 610 mΩ (Max.) @ VGS = 10 V, ID= 5 A

• Low gate charge ( Typ. 45 nC)

• Low Crss ( Typ. 17.5 pF)

• 100% avalanche tested

• Fast recovery body diode

Description

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.