Discrete Semiconductor Products

STB100NF03L-03-1

Obsolete

MOSFET N-CH 30V 100A I2PAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 100A I2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STB100NF03L-03-1

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	88 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	300 W
Rds On (Max) @ Id, Vgs	3.2 mOhm
Supplier Device Package	I2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	Supplier Device Package	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STB100NF03L-03-1	Through Hole	I2PAK	16 V	4.5 V 10 V	2.5 V	300 W	I2PAK TO-262-3 Long Leads TO-262AA	100 A	175 °C	-55 °C	N-Channel	6200 pF	MOSFET (Metal Oxide)	88 nC	3.2 mOhm	30 V
STMicroelectronics STB100NH02LT4	Surface Mount	D2PAK	20 V	5 V 10 V	1.8 V	100 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	60 A	175 °C	-55 °C	N-Channel	2850 pF	MOSFET (Metal Oxide)		6 mOhm	24 V	64 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.72

General part information

N-Channel 30 V 100A (Tc) 300W (Tc) Through Hole I2PAK

Technical documentation and resources

No documents available