TPS28225D
LTB4-A, 27-V HALF BRIDGE GATE DRIVER WITH 4-V UVLO FOR SYNCHRONOUS RECTIFICATION
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TPS28225D
LTB4-A, 27-V HALF BRIDGE GATE DRIVER WITH 4-V UVLO FOR SYNCHRONOUS RECTIFICATION
Technical Specifications
Parameters and characteristics for this part
| Specification | TPS28225D |
|---|---|
| Channel Type | Synchronous |
| Current - Peak Output (Source, Sink) [custom] | 2 A |
| Current - Peak Output (Source, Sink) [custom] | 2 A |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET |
| High Side Voltage - Max (Bootstrap) [Max] | 33 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIL, VIH | 2.1 V, 0.8 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 125 ¯C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Rise / Fall Time (Typ) [custom] | 10 ns |
| Rise / Fall Time (Typ) [custom] | 10 ns |
| Supplier Device Package | 8-SOIC |
| Voltage - Supply [Max] | 8.8 V |
| Voltage - Supply [Min] | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 2.23 | |
| 10 | $ 2.00 | |||
| 75 | $ 1.89 | |||
| 150 | $ 1.61 | |||
| 300 | $ 1.51 | |||
| 525 | $ 1.32 | |||
| 1050 | $ 1.10 | |||
| 2550 | $ 1.02 | |||
| 5025 | $ 0.98 | |||
| Texas Instruments | TUBE | 1 | $ 1.68 | |
| 100 | $ 1.38 | |||
| 250 | $ 0.99 | |||
| 1000 | $ 0.75 | |||
Description
General part information
TPS28225-Q1 Series
The TPS28225-Q1 is a high-speed driver for N-channel complementary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current, single and multi-phase DC-to-DC converters. The TPS28225-Q1 is highly efficient, has a small solution size and low-EMI emissions.
The TPS28225-Q1 device offers high performance features such as a 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capabilities. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor is charged by an internal diode which allows the use of an N-channel MOSFETs in a half-bridge configuration.
The TPS28225-Q1 is offered in an economical SOIC-8 package and in a thermally enhanced small sized VSON package. The driver is specified to operate in the temperature range of –40°C to 105°C with the absolute maximum junction temperature of 150°C.
Documents
Technical documentation and resources
