Zenode.ai Logo
Beta
No image
Isolators

4N30S

Obsolete
ON Semiconductor

OPTOISO 5.3KV DARL W/BASE 6SMD

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
Isolators

4N30S

Obsolete
ON Semiconductor

OPTOISO 5.3KV DARL W/BASE 6SMD

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

Specification4N30S
Current - DC Forward (If) (Max) [Max]80 mA
Current - Output / Channel150 mA
Current Transfer Ratio (Min) [Min]100 %
Input TypeDC
Mounting TypeSurface Mount
Number of Channels1
Operating Temperature [Max]100 °C
Operating Temperature [Min]-55 °C
Output TypeDarlington with Base
Package / Case6-SMD, Gull Wing
Supplier Device Package6-SMD
Turn On / Turn Off Time (Typ)5 µs
Turn On / Turn Off Time (Typ) [Max]40 µs
Vce Saturation (Max) [Max]1 V
Voltage - Isolation5300 Vrms
Voltage - Output (Max) [Max]30 V

4N30M Series

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M 6-Pin DIP General Purpose Photodarlington Optocoupler

PartSupplier Device PackageOperating Temperature [Max]Operating Temperature [Min]Turn On / Turn Off Time (Typ)Turn On / Turn Off Time (Typ) [Max]Mounting TypeVoltage - IsolationInput TypePackage / CasePackage / CasePackage / CaseNumber of ChannelsVoltage - Output (Max) [Max]Output TypeVce Saturation (Max) [Max]Current - DC Forward (If) (Max) [Max]Current Transfer Ratio (Min) [Min]Current - Output / ChannelPackage / Case
MOC3061VM
ON Semiconductor
6-DIP
100 °C
-40 °C
5 µs
40 µs
Through Hole
4170 Vrms
DC
6-DIP
0.3 in
7.62 mm
1
30 V
Darlington with Base
1 V
80 mA
100 %
150 mA
MOC3061VM
ON Semiconductor
6-DIP
100 °C
-55 °C
5 µs
40 µs
Through Hole
DC
6-DIP
10.16 mm
1
55 V
Darlington with Base
1 V
60 mA
100 %
10.16 mm
ON Semiconductor
6-SMD
100 °C
-55 °C
5 µs
40 µs
Surface Mount
5300 Vrms
DC
6-SMD
Gull Wing
1
30 V
Darlington with Base
1 V
80 mA
100 %
150 mA
ONSEMI CNY17F3SM
ON Semiconductor
6-SMD
100 °C
-40 °C
5 µs
40 µs
Surface Mount
4170 Vrms
DC
6-SMD
Gull Wing
1
30 V
Darlington with Base
1 V
80 mA
100 %
150 mA
ON Semiconductor
6-DIP
100 °C
-55 °C
5 µs
40 µs
Through Hole
5300 Vrms
DC
6-DIP
0.3 in
7.62 mm
1
30 V
Darlington with Base
1 V
80 mA
100 %
150 mA
ON Semiconductor
6-SMD
100 °C
-55 °C
5 µs
40 µs
Surface Mount
5300 Vrms
DC
6-SMD
Gull Wing
1
30 V
Darlington with Base
1 V
80 mA
100 %
150 mA
ONSEMI CNY17F3SM
ON Semiconductor
6-SMD
100 °C
-40 °C
5 µs
40 µs
Surface Mount
4170 Vrms
DC
6-SMD
Gull Wing
1
30 V
Darlington with Base
1 V
80 mA
100 %
150 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

4N30M Series

The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.

Documents

Technical documentation and resources