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Technical Specifications
Parameters and characteristics for this part
| Specification | 4N30S |
|---|---|
| Current - DC Forward (If) (Max) [Max] | 80 mA |
| Current - Output / Channel | 150 mA |
| Current Transfer Ratio (Min) [Min] | 100 % |
| Input Type | DC |
| Mounting Type | Surface Mount |
| Number of Channels | 1 |
| Operating Temperature [Max] | 100 °C |
| Operating Temperature [Min] | -55 °C |
| Output Type | Darlington with Base |
| Package / Case | 6-SMD, Gull Wing |
| Supplier Device Package | 6-SMD |
| Turn On / Turn Off Time (Typ) | 5 µs |
| Turn On / Turn Off Time (Typ) [Max] | 40 µs |
| Vce Saturation (Max) [Max] | 1 V |
| Voltage - Isolation | 5300 Vrms |
| Voltage - Output (Max) [Max] | 30 V |
4N30M Series
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M 6-Pin DIP General Purpose Photodarlington Optocoupler
| Part | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Turn On / Turn Off Time (Typ) | Turn On / Turn Off Time (Typ) [Max] | Mounting Type | Voltage - Isolation | Input Type | Package / Case | Package / Case | Package / Case | Number of Channels | Voltage - Output (Max) [Max] | Output Type | Vce Saturation (Max) [Max] | Current - DC Forward (If) (Max) [Max] | Current Transfer Ratio (Min) [Min] | Current - Output / Channel | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 6-DIP | 100 °C | -40 °C | 5 µs | 40 µs | Through Hole | 4170 Vrms | DC | 6-DIP | 0.3 in | 7.62 mm | 1 | 30 V | Darlington with Base | 1 V | 80 mA | 100 % | 150 mA | |
ON Semiconductor | 6-DIP | 100 °C | -55 °C | 5 µs | 40 µs | Through Hole | DC | 6-DIP | 10.16 mm | 1 | 55 V | Darlington with Base | 1 V | 60 mA | 100 % | 10.16 mm | |||
ON Semiconductor | 6-SMD | 100 °C | -55 °C | 5 µs | 40 µs | Surface Mount | 5300 Vrms | DC | 6-SMD Gull Wing | 1 | 30 V | Darlington with Base | 1 V | 80 mA | 100 % | 150 mA | |||
ON Semiconductor | 6-SMD | 100 °C | -40 °C | 5 µs | 40 µs | Surface Mount | 4170 Vrms | DC | 6-SMD Gull Wing | 1 | 30 V | Darlington with Base | 1 V | 80 mA | 100 % | 150 mA | |||
ON Semiconductor | 6-DIP | 100 °C | -55 °C | 5 µs | 40 µs | Through Hole | 5300 Vrms | DC | 6-DIP | 0.3 in | 7.62 mm | 1 | 30 V | Darlington with Base | 1 V | 80 mA | 100 % | 150 mA | |
ON Semiconductor | 6-SMD | 100 °C | -55 °C | 5 µs | 40 µs | Surface Mount | 5300 Vrms | DC | 6-SMD Gull Wing | 1 | 30 V | Darlington with Base | 1 V | 80 mA | 100 % | 150 mA | |||
ON Semiconductor | 6-SMD | 100 °C | -40 °C | 5 µs | 40 µs | Surface Mount | 4170 Vrms | DC | 6-SMD Gull Wing | 1 | 30 V | Darlington with Base | 1 V | 80 mA | 100 % | 150 mA |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
4N30M Series
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
Documents
Technical documentation and resources