Zenode.ai Logo
Beta
No image
Isolators

4N30

Obsolete
ON Semiconductor

OPTOISO 5.3KV DARL W/BASE 6DIP

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
Isolators

4N30

Obsolete
ON Semiconductor

OPTOISO 5.3KV DARL W/BASE 6DIP

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

Specification4N30
Current - DC Forward (If) (Max) [Max]80 mA
Current - Output / Channel150 mA
Current Transfer Ratio (Min) [Min]100 %
Input TypeDC
Mounting TypeThrough Hole
Number of Channels1
Operating Temperature [Max]100 °C
Operating Temperature [Min]-55 °C
Output TypeDarlington with Base
Package / Case6-DIP
Package / Case0.3 in
Package / Case7.62 mm
Supplier Device Package6-DIP
Turn On / Turn Off Time (Typ)5 µs
Turn On / Turn Off Time (Typ) [Max]40 µs
Vce Saturation (Max) [Max]1 V
Voltage - Isolation5300 Vrms
Voltage - Output (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 0.94
10$ 0.58
25$ 0.49
100$ 0.38
195$ 0.44
250$ 0.33
500$ 0.30
1000$ 0.27
2500$ 0.24
5000$ 0.22

Description

General part information

4N30M Series

The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.

Documents

Technical documentation and resources