Discrete Semiconductor Products

JANTXV1N645-1

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DIODE GEN PURP 225V 400MA DO35

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Discrete Semiconductor Products

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DIODE GEN PURP 225V 400MA DO35

Technical Specifications

Parameters and characteristics for this part

Specification	JANTXV1N645-1

Current - Average Rectified (Io)	400 mA
Current - Reverse Leakage @ Vr	50 nA
Grade	Military
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Axial, DO-35, DO-204AH
Qualification	MIL-PRF-19500/240
Speed	200 mA, 500 ns
Supplier Device Package	DO-204AH (DO-35)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	225 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Package / Case	Technology	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Speed	Speed	Supplier Device Package	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Grade	Qualification
Microchip Technology 1N645-1	Axial DO-204AH DO-35	Standard	1 V	50 nA	Standard Recovery >500ns	200 mA	DO-204AH (DO-35)	400 mA	225 V	175 ░C	-65 C	Through Hole
Microchip Technology JANTXV1N645-1	Axial DO-204AH DO-35	Standard	1 V	50 nA		200 mA 500 ns	DO-204AH (DO-35)	400 mA	225 V	175 ░C	-65 C	Through Hole	Military	MIL-PRF-19500/240

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 225 V 400mA Through Hole DO-204AH (DO-35)

Technical documentation and resources