Specification	IRLM220ATF

Current - Continuous Drain (Id) @ 25°C	1.13 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC
Input Capacitance (Ciss) (Max) @ Vds	430 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	2 W
Rds On (Max) @ Id, Vgs	800 mOhm
Supplier Device Package	SOT-223-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

IRLM220A Series

Power MOSFET, N-Channel, A-FET, 200 V, 1.13 A, 800 mΩ, SOT-223

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
ON Semiconductor IRLM220ATF	5 V	2 W	430 pF	TO-261-4 TO-261AA	-55 °C	150 °C	Surface Mount	MOSFET (Metal Oxide)	SOT-223-4	1.13 A	20 V	N-Channel	200 V	15 nC	800 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IRLM220A Series

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, ad withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.