IRLM220A Series

Power MOSFET, N-Channel, A-FET, 200 V, 1.13 A, 800 mΩ, SOT-223

Catalog

Power MOSFET, N-Channel, A-FET, 200 V, 1.13 A, 800 mΩ, SOT-223

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
ON Semiconductor IRLM220ATF	5 V	2 W	430 pF	TO-261-4 TO-261AA	-55 °C	150 °C	Surface Mount	MOSFET (Metal Oxide)	SOT-223-4	1.13 A	20 V	N-Channel	200 V	15 nC	800 mOhm

Catalog

Power MOSFET, N-Channel, A-FET, 200 V, 1.13 A, 800 mΩ, SOT-223

Key Features

• Avalanche Rugged Technology

• Rugged Gate Oxide Technology

• Lower Input Capacitance

• Improved Gate Charge

• Extended Safe Operating Area

• Lower Leakage Current : 10 μA (Max.) @ VDS= 200 V

• Lower rDS(on): 0.609 Ω (Typ.)

Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, ad withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.