Discrete Semiconductor Products
RGT80TS65DGC13
ActiveRohm Semiconductor
5ΜS SHORT-CIRCUIT TOLERANCE, 650V 40A, FRD BUILT-IN, TO-247GE, FIELD STOP TRENCH IGBT
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Discrete Semiconductor Products
RGT80TS65DGC13
ActiveRohm Semiconductor
5ΜS SHORT-CIRCUIT TOLERANCE, 650V 40A, FRD BUILT-IN, TO-247GE, FIELD STOP TRENCH IGBT
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Technical Specifications
Parameters and characteristics for this part
| Specification | RGT80TS65DGC13 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 70 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Gate Charge | 79 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 234 W |
| Reverse Recovery Time (trr) | 236 ns |
| Supplier Device Package | TO-247G |
| Td (on/off) @ 25°C | 119 ns, 34 ns |
| Test Condition | 10 Ohm, 40 A, 400 V, 15 V |
| Vce(on) (Max) @ Vge, Ic | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RGT80TS65D Series
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
Documents
Technical documentation and resources