Discrete Semiconductor Products

RGT80TS65DGC11

NRND

IGBT, 70 A, 1.65 V, 234 W, 650 V, TO-247N, 3 PINS

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Discrete Semiconductor Products

NRND

IGBT, 70 A, 1.65 V, 234 W, 650 V, TO-247N, 3 PINS

Technical Specifications

Parameters and characteristics for this part

Specification	RGT80TS65DGC11

Current - Collector (Ic) (Max) [Max]	70 A
Current - Collector Pulsed (Icm)	120 A
Gate Charge	79 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-247-3
Power - Max [Max]	234 W
Reverse Recovery Time (trr)	58 ns
Supplier Device Package	TO-247N
Td (on/off) @ 25°C [custom]	119 ns
Td (on/off) @ 25°C [custom]	34 ns
Test Condition	400 V, 10 Ohm, 15 V, 40 A
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

5µs Short-Circuit Tolerance, 650V 40A, FRD Built-in, TO-247GE, Field Stop Trench IGBT

Part	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Test Condition	Gate Charge	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Mounting Type	IGBT Type	Reverse Recovery Time (trr)	Current - Collector Pulsed (Icm)
Rohm Semiconductor RGT80TS65DGC11	119 ns	34 ns	TO-247N	650 V	234 W	70 A	2.1 V	10 Ohm 15 V 40 A 400 V	79 nC	175 °C	-40 °C	TO-247-3	Through Hole	Trench Field Stop	58 ns	120 A
Rohm Semiconductor RGT80TS65DGC13	119 ns	34 ns	TO-247G	650 V	234 W	70 A	2.1 V	10 Ohm 15 V 40 A 400 V	79 nC	175 °C	-40 °C	TO-247-3	Through Hole	Trench Field Stop	236 ns	120 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Technical documentation and resources