Specification	FDMA1025P

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	3.1 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	4.8 nC
Input Capacitance (Ciss) (Max) @ Vds	450 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-VDFN Exposed Pad
Power - Max [Max]	700 mW
Rds On (Max) @ Id, Vgs	155 mOhm
Supplier Device Package	6-MicroFET (2x2)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

FDMA1025P Series

Dual P-Channel PowerTrench® MOSFET -20V, -3.1A, 155mΩ

Part	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case	Configuration	Technology	Supplier Device Package
ON Semiconductor FDMA1025P	700 mW	4.8 nC	Surface Mount	3.1 A	1.5 V	-55 °C	150 °C	450 pF	Logic Level Gate	155 mOhm	20 V	6-VDFN Exposed Pad	2 P-Channel	MOSFET (Metal Oxide)	6-MicroFET (2x2)
ON Semiconductor FDMA1025P	700 mW	4.8 nC	Surface Mount	3.1 A	1.5 V	-55 °C	150 °C	450 pF	Logic Level Gate	155 mOhm	20 V	6-VDFN Exposed Pad	2 P-Channel	MOSFET (Metal Oxide)	6-MicroFET (2x2)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1042	$ 0.29
		1042	$ 0.29
	N/A	1	$ 0.72
		1	$ 0.72
		1	$ 0.72
		1	$ 0.72
		10	$ 0.62
		10	$ 0.62
		10	$ 0.62
		10	$ 0.62
		100	$ 0.43
		100	$ 0.43
		100	$ 0.43
		100	$ 0.43
		500	$ 0.36
		500	$ 0.36
		500	$ 0.36
		500	$ 0.36
		1000	$ 0.31
		1000	$ 0.31
		1000	$ 0.31
		1000	$ 0.31

Description

General part information

FDMA1025P Series

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra - portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and well suited to linear mode applications.