FDMA1025P Series

Dual P-Channel PowerTrench® MOSFET -20V, -3.1A, 155mΩ

Catalog

Dual P-Channel PowerTrench® MOSFET -20V, -3.1A, 155mΩ

Part	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case	Configuration	Technology	Supplier Device Package
ON Semiconductor FDMA1025P	700 mW	4.8 nC	Surface Mount	3.1 A	1.5 V	-55 °C	150 °C	450 pF	Logic Level Gate	155 mOhm	20 V	6-VDFN Exposed Pad	2 P-Channel	MOSFET (Metal Oxide)	6-MicroFET (2x2)
ON Semiconductor FDMA1025P	700 mW	4.8 nC	Surface Mount	3.1 A	1.5 V	-55 °C	150 °C	450 pF	Logic Level Gate	155 mOhm	20 V	6-VDFN Exposed Pad	2 P-Channel	MOSFET (Metal Oxide)	6-MicroFET (2x2)

Catalog

Dual P-Channel PowerTrench® MOSFET -20V, -3.1A, 155mΩ

Key Features

• Max rDS(ON)= 155mΩ at VGS= -4.5V, ID= -3.1A

• Max rDS(ON)= 220mΩ at VGS= -2.5V, ID= -2.3A

• Low profile - 0.8mm maximum - in the new package MicroFET 2X2 mm

• RoHS Compliant

• Free from halogenated compounds and antimonyoxides

Description

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra - portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and well suited to linear mode applications.