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Diode TVS Dual Common Anode Uni-Dir 3V 24W 3-Pin SOT-23 Emboss T/R
Discrete Semiconductor Products

PMV60ENEAR

Active
Freescale Semiconductor - NXP

TRANSISTOR MOSFET N-CH 40V 3A 3-PIN TO-263AB T/R

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Diode TVS Dual Common Anode Uni-Dir 3V 24W 3-Pin SOT-23 Emboss T/R
Discrete Semiconductor Products

PMV60ENEAR

Active
Freescale Semiconductor - NXP

TRANSISTOR MOSFET N-CH 40V 3A 3-PIN TO-263AB T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationPMV60ENEAR
Current - Continuous Drain (Id) @ 25°C3 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]5 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds180 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)7.5 W, 615 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs75 mOhm
Supplier Device PackageTO-236AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.36
10$ 0.28
100$ 0.17
500$ 0.16
1000$ 0.11
Digi-Reel® 1$ 0.36
10$ 0.28
100$ 0.17
500$ 0.16
1000$ 0.11
Tape & Reel (TR) 3000$ 0.10
6000$ 0.09
9000$ 0.08
30000$ 0.08
75000$ 0.08

Description

General part information

PMV60ENEA Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.