Catalog
40 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
40 V, N-channel Trench MOSFET
40 V, N-channel Trench MOSFET
| Part | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | FET Type | Qualification | Current - Continuous Drain (Id) @ 25°C | Grade | Package / Case | Technology | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Freescale Semiconductor - NXP | 40 V | 7.5 W 615 mW | -55 °C | 175 ░C | TO-236AB | 75 mOhm | 180 pF | Surface Mount | N-Channel | AEC-Q101 | 3 A | Automotive | SC-59 SOT-23-3 TO-236-3 | MOSFET (Metal Oxide) | 20 V | 4.5 V 10 V | 2.5 V | 5 nC |