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STF12NK60Z
Discrete Semiconductor Products

STF12NK60Z

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STMicroelectronics

N-CHANNEL 600 V, 0.53 OHM, 10 A ZENER-PROTECTED SUPERMESH(TM)2 POWER MOSFET IN A TO-220FP PACKAGE

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STF12NK60Z
Discrete Semiconductor Products

STF12NK60Z

Active
STMicroelectronics

N-CHANNEL 600 V, 0.53 OHM, 10 A ZENER-PROTECTED SUPERMESH(TM)2 POWER MOSFET IN A TO-220FP PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTF12NK60Z
Current - Continuous Drain (Id) @ 25°C10 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs59 nC
Input Capacitance (Ciss) (Max) @ Vds1740 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)35 W
Rds On (Max) @ Id, Vgs640 mOhm
Supplier Device PackageTO-220FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1362$ 1.58

Description

General part information

STF12NK60Z Series

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, specialties is taken to ensure a very good dv/dt capability for the most demanding application.

Such series complements ST full range of high voltage Power MOSFETs.