Specification	FQP2P40-F080

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	400 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	350 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	63 W
Rds On (Max) @ Id, Vgs	6.5 Ohm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FQP2P40 Series

Power MOSFET, P-Channel, QFET®, -400 V, -2.0 A, 6.5 Ω, TO-220

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FQP2N80	5 V	85 W	-55 °C	150 °C	10 V	TO-220-3	550 pF	30 V	6.3 Ohm	800 V	TO-220-3	MOSFET (Metal Oxide)	2.4 A	Through Hole	N-Channel
ON Semiconductor FQP2P40	5 V		-55 °C	150 °C	10 V	TO-220-3		30 V	6.5 Ohm	400 V	TO-220-3	MOSFET (Metal Oxide)	2 A	Through Hole	P-Channel	350 pF	63 W	13 nC
ON Semiconductor FQP2P25	5 V		-55 °C	150 °C	10 V	TO-220-3	250 pF	30 V	4 Ohm	250 V	TO-220-3	MOSFET (Metal Oxide)	2.3 A	Through Hole	P-Channel		52 W	8.5 nC
ON Semiconductor FQP2N80	5 V	85 W	-55 °C	150 °C	10 V	TO-220-3	550 pF	30 V	6.3 Ohm	800 V	TO-220-3	MOSFET (Metal Oxide)	2.4 A	Through Hole	N-Channel
ON Semiconductor FQP2P40-F080	5 V		-55 °C	150 °C	10 V	TO-220-3		30 V	6.5 Ohm	400 V	TO-220-3	MOSFET (Metal Oxide)	2 A	Through Hole	P-Channel	350 pF	63 W	13 nC
ON Semiconductor FQP2N40	5 V		-55 °C	150 °C	10 V	TO-220-3	150 pF	30 V		400 V	TO-220-3	MOSFET (Metal Oxide)	1.8 A	Through Hole	N-Channel		40 W	5.5 nC	5.8 Ohm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQP2P40 Series

These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are wellsuited for electronic lamp ballast based on complimentary half bridge.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet

Package Drawing-340AT-TO-220-3LD

Package Drawing