
HMC606LC5TR-R5
ActiveGAAS, INGAP, HBT, MMIC, ULTRALOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 GHZ TO 18 GHZ
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HMC606LC5TR-R5
ActiveGAAS, INGAP, HBT, MMIC, ULTRALOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 GHZ TO 18 GHZ
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Technical Specifications
Parameters and characteristics for this part
| Specification | HMC606LC5TR-R5 |
|---|---|
| Current - Supply | 64 mA |
| Frequency [Max] | 18 GHz |
| Frequency [Min] | 2 GHz |
| Gain | 13.5 dB |
| Mounting Type | Surface Mount |
| Noise Figure | 7 dB |
| P1dB | 15 dBm |
| Package / Case | 32-TFCQFN Exposed Pad |
| Supplier Device Package | 32-CSMT |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 500 | $ 136.93 | |
Description
General part information
HMC606-Die Series
The HMC606LC5 is a gallium arsenide (GaAs), indium gallium phosphide (InGaP), heterojunction bipolar transistor (HBT), monolithic microwave integrated circuit (MMIC) distributed amplifier housed in a 32-terminal, ceramic, leadless chip carrier (LCC) package that operates from 2 GHz to 18 GHz. With an input signal of 12 GHz, the amplifier provides ultralow phase noise performance of −160 dBc/Hz at a 10 kHz offset, representing a significant improvement over field effect transistor (FET)-based distributed amplifiers.The HMC606LC5 provides 13.5 dB of small signal gain, 27 dBm output IP3, and 15 dBm of output power for 1 dB compression while requiring 64 mA from a 5.0 V supply. The input and output of the HMC606LC5 amplifier are internally matched to 50 Ω and are internally dc blocked.ApplicationsRadars, electronic warfare (EW), and electronic counter measures (ECMs)Microwave radiosTest instrumentationMilitary and spaceFiber optic systems
Documents
Technical documentation and resources