SI5480DU-T1-E3

Obsolete

MOSFET N-CH 30V 12A PPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 12A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SI5480DU-T1-E3

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC
Input Capacitance (Ciss) (Max) @ Vds	1230 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® ChipFET™ Single
Power Dissipation (Max)	31 W, 3.1 W
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	PowerPAK® ChipFET™ Single
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Power Dissipation (Max)	Vgs (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Rds On (Max) @ Id, Vgs	Package / Case
Vishay General Semiconductor - Diodes Division SI5480DU-T1-GE3	3.1 W 31 W	20 V	PowerPAK® ChipFET™ Single	1230 pF	34 nC	12 A	-55 °C	150 °C	Surface Mount	30 V	MOSFET (Metal Oxide)	3 V	4.5 V 10 V	N-Channel	16 mOhm	PowerPAK® ChipFET™ Single
Vishay General Semiconductor - Diodes Division SI5480DU-T1-E3	3.1 W 31 W	20 V	PowerPAK® ChipFET™ Single	1230 pF	34 nC	12 A	-55 °C	150 °C	Surface Mount	30 V	MOSFET (Metal Oxide)	3 V	4.5 V 10 V	N-Channel	16 mOhm	PowerPAK® ChipFET™ Single

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 12A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount PowerPAK® ChipFET™ Single

Technical documentation and resources

No documents available