SI5480 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET N-CH 30V 12A PPAK
| Part | Power Dissipation (Max) | Vgs (Max) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Drain to Source Voltage (Vdss) | Technology | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Rds On (Max) @ Id, Vgs | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 3.1 W 31 W | 20 V | PowerPAK® ChipFET™ Single | 1230 pF | 34 nC | 12 A | -55 °C | 150 °C | Surface Mount | 30 V | MOSFET (Metal Oxide) | 3 V | 4.5 V 10 V | N-Channel | 16 mOhm | PowerPAK® ChipFET™ Single |
Vishay General Semiconductor - Diodes Division | 3.1 W 31 W | 20 V | PowerPAK® ChipFET™ Single | 1230 pF | 34 nC | 12 A | -55 °C | 150 °C | Surface Mount | 30 V | MOSFET (Metal Oxide) | 3 V | 4.5 V 10 V | N-Channel | 16 mOhm | PowerPAK® ChipFET™ Single |