Specification	FDC637AN

Current - Continuous Drain (Id) @ 25°C	6.2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC
Input Capacitance (Ciss) (Max) @ Vds	1125 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Rds On (Max) @ Id, Vgs	24 mOhm
Supplier Device Package	SuperSOT™-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.5 V

FDC637BNZ Series

N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.2A, 24mΩ

Part	FET Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FDC637AN	N-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C	6.2 A	20 V	1.5 V	SuperSOT™-6	SOT-23-6 Thin TSOT-23-6	1125 pF	24 mOhm	16 nC	8 V	Surface Mount	2.5 V 4.5 V
ON Semiconductor FDC637BNZ	N-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C	6.2 A	20 V	1.5 V	SuperSOT™-6	SOT-23-6 Thin TSOT-23-6	895 pF	24 mOhm	12 nC	12 V	Surface Mount	2.5 V 4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.12
		10	$ 0.70
		100	$ 0.46
		500	$ 0.36
		1000	$ 0.33
	Digi-Reel®	1	$ 1.12
		10	$ 0.70
		100	$ 0.46
		500	$ 0.36
		1000	$ 0.33
	Tape & Reel (TR)	3000	$ 0.28
		6000	$ 0.26
		9000	$ 0.25
		15000	$ 0.24
Newark	Each (Supplied on Full Reel)	3000	$ 0.33
		6000	$ 0.30
		12000	$ 0.28
		18000	$ 0.26
		30000	$ 0.25
ON Semiconductor	N/A	1	$ 0.26

Description

General part information

FDC637BNZ Series

This N-Channel 2.5V specified MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages.