FDC637BNZ Series

N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.2A, 24mΩ

Catalog

N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.2A, 24mΩ

Part	FET Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FDC637AN	N-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C	6.2 A	20 V	1.5 V	SuperSOT™-6	SOT-23-6 Thin TSOT-23-6	1125 pF	24 mOhm	16 nC	8 V	Surface Mount	2.5 V 4.5 V
ON Semiconductor FDC637BNZ	N-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C	6.2 A	20 V	1.5 V	SuperSOT™-6	SOT-23-6 Thin TSOT-23-6	895 pF	24 mOhm	12 nC	12 V	Surface Mount	2.5 V 4.5 V

Catalog

N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.2A, 24mΩ

Key Features

• Max rDS(on)= 24mΩ at VGS= 4.5V, ID= 6.2A

• Max rDS(on)= 32mΩ at VGS= 2.5V, ID= 5.2A

• Fast switching speed

• Low gate charge (8nC typical)

• High performance trench technology for extremely low rDS(on)

• SuperSOT™¨C6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick)

• HBM ESD protection level > 2kV typical (Note 3)

• Manufactured using green packaging material

• Halide-Free

• RoHS Compliant

Description

This N-Channel 2.5V specified MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages.