Discrete Semiconductor Products

SCT040W120G3AG

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STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 1200 V, 40 MOHM TYP., 40 A IN AN HIP247 PACKAGE

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DocumentsSCT040W120G3AG | Datasheet +24

Discrete Semiconductor Products

SCT040W120G3AG

Active

STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 1200 V, 40 MOHM TYP., 40 A IN AN HIP247 PACKAGE

Deep-Dive with AI

DocumentsSCT040W120G3AG | Datasheet +24

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCT040W120G3AG

Drain to Source Voltage (Vdss)	1.2 kV
Drive Voltage (Max Rds On, Min Rds On)	18 V, 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	1329 pF
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-55 ░C
Package / Case	TO-247-3
Power Dissipation (Max)	312 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	54 mOhm
Supplier Device Package	HiP247™
Vgs (Max) [Max]	22 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	4.2 V

SCT040W120G3AG Series

Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs (Max) [Max]	Vgs (Max) [Min]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Grade	Qualification	FET Type	Operating Temperature [Max]	Operating Temperature [Min]
STMicroelectronics SCT040W120G3AG	HiP247™	1.2 kV	22 V	-10 V	15 V 18 V	312 W	54 mOhm	TO-247-3	1329 pF	Through Hole	56 nC	4.2 V	Automotive	AEC-Q101	N-Channel	200 °C	-55 ░C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	552	$ 16.18
Newark	Each	1	$ 16.85
		10	$ 14.25
		25	$ 13.37
		50	$ 12.84
		100	$ 12.36
		250	$ 11.77

Description

General part information

SCT040W120G3AG Series

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rdgeneration SiC MOSFET technology. The device features a very low RDS(on)over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.