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Three Tower
Discrete Semiconductor Products

MURT30010R

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GeneSiC Semiconductor

DIODE MODULES SI S-FST RECOV 3TWR 50-600V 300A100P/71R

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Three Tower
Discrete Semiconductor Products

MURT30010R

Active
GeneSiC Semiconductor

DIODE MODULES SI S-FST RECOV 3TWR 50-600V 300A100P/71R

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationMURT30010R
Current - Average Rectified (Io) (per Diode)150 A
Diode Configuration1 Pair Common Anode
Mounting TypeChassis Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseThree Tower
Speed500 ns, 200 mA
Supplier Device PackageThree Tower
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]100 V
Voltage - Forward (Vf) (Max) @ If [Max]1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 80$ 98.74
N/A 0$ 102.46
MouserN/A 40$ 98.74

Description

General part information

MURT300 Series

Diode Array 1 Pair Common Anode 100 V 150A Chassis Mount Three Tower

Documents

Technical documentation and resources