MURT300 Series
Manufacturer: GeneSiC Semiconductor
DIODE MODULE GP 100V 150A 3TOWER
| Part | Technology | Mounting Type | Voltage - Forward (Vf) (Max) @ If [Max] | Package / Case | Speed | Supplier Device Package | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Diode Configuration | Current - Average Rectified (Io) (per Diode) | Voltage - DC Reverse (Vr) (Max) [Max] | Reverse Recovery Time (trr) | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Standard | Chassis Mount | 1.3 V | Three Tower | 200 mA 500 ns | Three Tower | -55 °C | 150 °C | 1 Pair Common Cathode | 150 A | 100 V | ||
GeneSiC Semiconductor | Standard | Chassis Mount | 1.3 V | Three Tower | 200 mA 500 ns | Three Tower | -55 °C | 150 °C | 1 Pair Common Anode | 150 A | 50 V | ||
GeneSiC Semiconductor | Standard | Chassis Mount | 1.3 V | Three Tower | 200 mA 500 ns | Three Tower | -55 °C | 150 °C | 1 Pair Common Cathode | 150 A | 50 V | ||
GeneSiC Semiconductor | Standard | Chassis Mount | 1.3 V | Three Tower | 200 mA 500 ns | Three Tower | -55 °C | 150 °C | 1 Pair Common Cathode | 150 A | 200 V | ||
GeneSiC Semiconductor | Standard | Chassis Mount | 1.3 V | Three Tower | 200 mA 500 ns | Three Tower | -55 °C | 150 °C | 1 Pair Common Anode | 150 A | 100 V | ||
GeneSiC Semiconductor | Standard | Chassis Mount | 1.3 V | Three Tower | 200 mA 500 ns | Three Tower | -55 °C | 150 °C | 1 Pair Common Anode | 150 A | 200 V | ||
GeneSiC Semiconductor | Standard | Chassis Mount | Three Tower | 200 mA 500 ns | Three Tower | -55 °C | 150 °C | 1 Pair Common Cathode | 150 A | 400 V | 150 ns | 1.35 V | |
GeneSiC Semiconductor | Standard | Chassis Mount | 1.7 V | Three Tower | 200 mA 500 ns | Three Tower | -55 °C | 150 °C | 1 Pair Common Cathode | 150 A | 600 V | 200 ns |