Discrete Semiconductor Products

FDW2502P

Obsolete

ON Semiconductor

MOSFET 2P-CH 20V 4.4A 8TSSOP

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

Discrete Semiconductor Products

FDW2502P

Obsolete

ON Semiconductor

MOSFET 2P-CH 20V 4.4A 8TSSOP

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDW2502P

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	4.4 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	21 nC
Input Capacitance (Ciss) (Max) @ Vds	1465 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-TSSOP
Package / Case [custom]	0.173 "
Package / Case [custom]	4.4 mm
Power - Max [Max]	600 mW
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	8-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

FDW25 Series

Part	Input Capacitance (Ciss) (Max) @ Vds	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Supplier Device Package	FET Feature	Package / Case	Package / Case [custom]	Package / Case [custom]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Configuration	Power - Max [Max]	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C [Max]	Current - Continuous Drain (Id) @ 25°C [Min]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDW2511NZ	1000 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	8-TSSOP	Logic Level Gate	8-TSSOP	0.173 "	4.4 mm	7.1 A	20 V	1.5 V	20 mOhm	2 N-Channel (Dual) Common Drain	1.6 W
ON Semiconductor FDW2501N	1290 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	8-TSSOP	Logic Level Gate	8-TSSOP	0.173 "	4.4 mm	6 A	20 V	1.5 V		2 N-Channel (Dual)	600 mW	18 mOhm	17 nC
ON Semiconductor FDW256P	2267 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	8-TSSOP		8-TSSOP	0.173 "	4.4 mm	8 A	30 V	3 V	13.5 mOhm				38 nC	P-Channel	1.3 W	4.5 V 10 V	25 V
ON Semiconductor FDW2521C	1082 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	8-TSSOP	Logic Level Gate	8-TSSOP	0.173 "	4.4 mm		20 V	1.5 V		N and P-Channel	600 mW	21 mOhm	17 nC					5.5 A	3.8 A
ON Semiconductor FDW2515NZ	745 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	8-TSSOP		8-TSSOP	0.173 "	4.4 mm	5.8 A	20 V	1.5 V		2 N-Channel (Dual) Common Drain	1.1 W	28 mOhm								5 V 12 nC
ON Semiconductor FDW2508P		MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	8-TSSOP	Logic Level Gate	8-TSSOP	0.173 "	4.4 mm	6 A	12 V	1.5 V		2 P-Channel	1 W	18 mOhm								36 nC	2644 pF
ON Semiconductor FDW2520C		MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	8-TSSOP	Logic Level Gate	8-TSSOP	0.173 "	4.4 mm	6 A	20 V	1.5 V		N and P-Channel	600 mW	18 mOhm								20 nC	1325 pF	4.4 A
ON Semiconductor FDW2501NZ	1286 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	8-TSSOP	Logic Level Gate	8-TSSOP	0.173 "	4.4 mm	5.5 A	20 V	1.5 V	18 mOhm	2 N-Channel (Dual)	600 mW		17 nC
ON Semiconductor FDW2511NZ	1000 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	8-TSSOP	Logic Level Gate	8-TSSOP	0.173 "	4.4 mm	7.1 A	20 V	1.5 V	20 mOhm	2 N-Channel (Dual) Common Drain	1.6 W
ON Semiconductor FDW2502P	1465 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	8-TSSOP	Logic Level Gate	8-TSSOP	0.173 "	4.4 mm	4.4 A	20 V	1.5 V	35 mOhm	2 P-Channel	600 mW									21 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDW25 Series

Mosfet Array 20V 4.4A 600mW Surface Mount 8-TSSOP

Documents

Technical documentation and resources