FDW25 Series

Catalog

MOSFET 2N-CH 20V 7.1A 8TSSOP

Part	Input Capacitance (Ciss) (Max) @ Vds	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Supplier Device Package	FET Feature	Package / Case	Package / Case [custom]	Package / Case [custom]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Configuration	Power - Max [Max]	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C [Max]	Current - Continuous Drain (Id) @ 25°C [Min]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDW2511NZ	1000 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	8-TSSOP	Logic Level Gate	8-TSSOP	0.173 "	4.4 mm	7.1 A	20 V	1.5 V	20 mOhm	2 N-Channel (Dual) Common Drain	1.6 W
ON Semiconductor FDW2501N	1290 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	8-TSSOP	Logic Level Gate	8-TSSOP	0.173 "	4.4 mm	6 A	20 V	1.5 V		2 N-Channel (Dual)	600 mW	18 mOhm	17 nC
ON Semiconductor FDW256P	2267 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	8-TSSOP		8-TSSOP	0.173 "	4.4 mm	8 A	30 V	3 V	13.5 mOhm				38 nC	P-Channel	1.3 W	4.5 V 10 V	25 V
ON Semiconductor FDW2521C	1082 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	8-TSSOP	Logic Level Gate	8-TSSOP	0.173 "	4.4 mm		20 V	1.5 V		N and P-Channel	600 mW	21 mOhm	17 nC					5.5 A	3.8 A
ON Semiconductor FDW2515NZ	745 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	8-TSSOP		8-TSSOP	0.173 "	4.4 mm	5.8 A	20 V	1.5 V		2 N-Channel (Dual) Common Drain	1.1 W	28 mOhm								5 V 12 nC
ON Semiconductor FDW2508P		MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	8-TSSOP	Logic Level Gate	8-TSSOP	0.173 "	4.4 mm	6 A	12 V	1.5 V		2 P-Channel	1 W	18 mOhm								36 nC	2644 pF
ON Semiconductor FDW2520C		MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	8-TSSOP	Logic Level Gate	8-TSSOP	0.173 "	4.4 mm	6 A	20 V	1.5 V		N and P-Channel	600 mW	18 mOhm								20 nC	1325 pF	4.4 A
ON Semiconductor FDW2501NZ	1286 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	8-TSSOP	Logic Level Gate	8-TSSOP	0.173 "	4.4 mm	5.5 A	20 V	1.5 V	18 mOhm	2 N-Channel (Dual)	600 mW		17 nC
ON Semiconductor FDW2511NZ	1000 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	8-TSSOP	Logic Level Gate	8-TSSOP	0.173 "	4.4 mm	7.1 A	20 V	1.5 V	20 mOhm	2 N-Channel (Dual) Common Drain	1.6 W
ON Semiconductor FDW2502P	1465 pF	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	8-TSSOP	Logic Level Gate	8-TSSOP	0.173 "	4.4 mm	4.4 A	20 V	1.5 V	35 mOhm	2 P-Channel	600 mW									21 nC