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STS5DNF60L

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STMicroelectronics

DUAL N-CHANNEL 60V - 0.045Y - 4A - SO-8 STRIPFET™ POWER MOSFET

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8-SOIC
Discrete Semiconductor Products

STS5DNF60L

Active
STMicroelectronics

DUAL N-CHANNEL 60V - 0.045Y - 4A - SO-8 STRIPFET™ POWER MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTS5DNF60L
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C5 A
Drain to Source Voltage (Vdss)60 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]15 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]1030 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case0.154 in
Package / Case8-SOIC
Package / Case3.9 mm
Power - Max [Max]2 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs45 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5 V

STS5DNF60 Series

Dual N-channel 60V - 0.045Y - 4A - SO-8 STripFET™ Power MOSFET

PartSupplier Device PackageCurrent - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)FET FeatureTechnologyVgs(th) (Max) @ IdPower - Max [Max]QualificationGate Charge (Qg) (Max) @ Vgs [Max]Mounting TypePackage / CasePackage / CasePackage / CaseConfigurationGradeOperating Temperature [Max]Operating Temperature [Min]Input Capacitance (Ciss) (Max) @ Vds [Max]Rds On (Max) @ Id, Vgs
8-SOIC
STMicroelectronics
8-SOIC
5 A
60 V
Logic Level Gate
MOSFET (Metal Oxide)
2.5 V
2 W
AEC-Q101
15 nC
Surface Mount
0.154 in
8-SOIC
3.9 mm
2 N-Channel (Dual)
Automotive
150 °C
-55 °C
1030 pF
45 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.54
10$ 1.26
100$ 0.98
500$ 0.83
1000$ 0.67
Digi-Reel® 1$ 1.54
10$ 1.26
100$ 0.98
500$ 0.83
1000$ 0.67
N/A 1660$ 1.84
Tape & Reel (TR) 2500$ 0.64
5000$ 0.60
12500$ 0.58

Description

General part information

STS5DNF60 Series

This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.