Specification	NTB7D3N15MC

Current - Continuous Drain (Id) @ 25°C	101 A, 15.2 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	8 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC
Input Capacitance (Ciss) (Max) @ Vds	4250 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	166 W, 3.75 W
Rds On (Max) @ Id, Vgs	7.3 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

NTB7D3N15MC Series

MOSFET - N-Channel Shielded Gate PowerTrench® 150 V, 7.3 mΩ, 101 A

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Rds On (Max) @ Id, Vgs	Vgs (Max)
ON Semiconductor NTB7D3N15MC	150 V	4250 pF	4.5 V	15.2 A 101 A	Surface Mount	8 V 10 V	N-Channel	TO-263 (D2PAK)	3.75 W 166 W	-55 °C	175 ░C	MOSFET (Metal Oxide)	53 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	7.3 mOhm	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET - N-Channel Shielded Gate PowerTrench®150 V, 7.3 mΩ, 101 A

Technical documentation and resources