NTB7D3N15MC Series

MOSFET - N-Channel Shielded Gate PowerTrench® 150 V, 7.3 mΩ, 101 A

Catalog

MOSFET - N-Channel Shielded Gate PowerTrench® 150 V, 7.3 mΩ, 101 A

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Rds On (Max) @ Id, Vgs	Vgs (Max)
ON Semiconductor NTB7D3N15MC	150 V	4250 pF	4.5 V	15.2 A 101 A	Surface Mount	8 V 10 V	N-Channel	TO-263 (D2PAK)	3.75 W 166 W	-55 °C	175 ░C	MOSFET (Metal Oxide)	53 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	7.3 mOhm	20 V

MOSFET - N-Channel Shielded Gate PowerTrench® 150 V, 7.3 mΩ, 101 A

• Shielded Gate MOSFET Technology

• Max RDS(on) = 7.3 mΩ at VGS = 10 V, ID = 62 A

• 50% Lower Qrr than other MOSFET Suppliers

• Lowers Switching Noise/EMI

• 100% UIL Tested

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MOSFET - N-Channel Shielded Gate PowerTrench®150 V, 7.3 mΩ, 101 A